? semiconductor components industries, llc, 2016 june, 2016 ? rev. 0 1 publication order number: NTMFS5C404N/d NTMFS5C404N power mosfet 40 v, 0.7 m , 378 a, single n?channel features ? small footprint (5x6 mm) for compact design ? low r ds(on) to minimize conduction losses ? low q g and capacitance to minimize driver losses ? these devices are pb?free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 40 v gate?to?source v oltage v gs 20 v continuous drain current r jc (notes 1, 3) steady state t c = 25 c i d 378 a t c = 100 c 267 power dissipation r jc (note 1) t c = 25 c p d 200 w t c = 100 c 100 continuous drain current r ja (notes 1, 2, 3) steady state t a = 25 c i d 53 a t a = 100 c 37 power dissipation r ja (notes 1 & 2) t a = 25 c p d 3.9 w t a = 100 c 1.9 pulsed drain current t a = 25 c, t p = 10 s i dm 900 a operating junction and storage temperature t j , t stg ?55 to + 175 c source current (body diode) i s 191 a single pulse drain?to?source avalanche energy (i l(pk) = 38 a) e as 907 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance maximum ratings parameter symbol value unit junction?to?case ? steady state r jc 0.75 c/w junction?to?ambient ? steady state (note 2) r ja 39 1. the entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. surface?mounted on fr4 board using a 650 mm 2 , 2 oz. cu pad. 3. maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. marking diagram www. onsemi.com 5c404n aywzz v (br)dss r ds(on) max i d max 40 v 0.7 m @ 10 v 378 a g (4) s (1,2,3) n?channel mosfet d (5,6) s s s g d d d d dfn5 (so?8fl) case 488aa style 1 1 see detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 5c404n = NTMFS5C404N a = assembly location y = year w = work week zz = lot traceability
NTMFS5C404N www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 19.7 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 40 v t j = 25 c 10 a t j = 125 c 250 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 4.0 v threshold temperature coefficient v gs(th) /t j ?6.2 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 50 a 0.57 0.7 m forward transconductance g fs v ds =15 v, i d = 50 a 210 s charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 25 v 8400 pf output capacitance c oss 4600 reverse transfer capacitance c rss 120 total gate charge q g(tot) v gs = 10 v, v ds = 20 v; i d = 50 a 128 nc threshold gate charge q g(th) v gs = 10 v, v ds = 20 v; i d = 50 a 22 gate?to?source charge q gs 35 gate?to?drain charge q gd 26 plateau voltage v gp 4.3 v switching characteristics (note 5) turn?on delay time t d(on) v gs = 10 v, v ds = 20 v, i d = 50 a, r g = 2.5 16 ns rise time t r 113 turn?off delay time t d(off) 77 fall time t f 109 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 50 a t j = 25 c 0.76 1.2 v t j = 125 c 0.63 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 50 a 96 ns charge time t a 49 discharge time t b 47 reverse recovery charge q rr 189 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperatures.
NTMFS5C404N www. onsemi.com 3 typical characteristics 5.6 v 5.4 v 5.2 v 5.0 v 4.8 v 4.6 v figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 3.0 1.5 1.0 0.5 0 0 100 200 300 400 500 5.0 4.0 3.0 0 100 200 300 400 figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage v gs , gate voltage (v) i d , drain current (a) 10 9 8 7 6 5 4 3 0.0 1.0 2.0 4.0 500 700 400 200 100 0 0.50 0.52 0.60 0.64 figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) 150 125 100 75 25 0 ?25 ?50 0.7 0.9 1.1 1.3 1.5 1.7 1.9 40 35 30 25 15 5 1.e?07 1.e?04 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance (m ) r ds(on) , drain?to?source resistance (m ) r ds(on) , normalized drain?to? source resistance i dss , leakage (a) 5.8 v 6.5 v t j = 125 c t j = 25 c t j = ?55 c t j = 25 c i ds = 25 a v gs = 10 v i d = 50 a 50 175 t j = 125 c t j = 85 c 600 700 500 600 2.0 2.5 3.0 0.5 1.5 2.5 4.5 3.5 0.54 1.e?06 1.e?05 1.e?03 10 20 t j = 150 c 6.0 300 600 800 0.56 0.58 0.62 0 800 10 v 8 v 7 v 6 v 4.4 v 2.1 v ds = 10 v
NTMFS5C404N www. onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) 40 30 20 10 0 1e+0 1e+1 1e+3 90 70 50 40 20 10 0 0 2 4 6 8 10 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) 100 10 1 1 10 100 1000 0.9 0.8 1.0 0.7 0.6 0.5 0.4 0.3 1 50 figure 11. safe operating area figure 12. i peak vs. time in avalanche v ds , drain?to?source voltage (v) time in avalanche (s) 100 10 1 0.1 1 10 100 1000 1 10 c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) i ds , drain?to?source current (a) i peak (a) v gs = 0 v t j = 25 c f = 1 mhz c iss c oss c rss v ds = 20 v i d = 50 a t j = 25 c q t q gs q gd v gs = 10 v v ds = 20 v i d = 50 a t d(off) t d(on) t f t r t j = 150 c t j = 25 c t j = ?55 c t j(initial) = 100 c t j(initial) = 25 c 1e?04 1e?02 r ds(on) limit thermal limit package limit dc 0.01 ms 0.1 ms 1 ms 10 ms t c = 25 c v gs 10 v 1e+2 1e+4 1e?03 1000 35 25 15 5 1e+5 30 60 t j = 125 c 5 10 100 80 130 110 100 120
NTMFS5C404N www. onsemi.com 5 figure 13. thermal characteristics pulse time (sec) 1e?02 1e?03 1e+00 1e?04 1e?01 1e?05 1e+01 1e?06 0.01 0.1 1 10 100 r ja (t) ( c/w) 1e+02 1e+03 single pulse 50% duty cycle 20% 10% 5% 2% 1% NTMFS5C404N 650 mm 2 , 2 oz., cu single layer pad device ordering information device marking package shipping ? NTMFS5C404Nt1g 5c404n dfn5 (pb?free) 1500 / tape & reel NTMFS5C404Nt3g 5c404n dfn5 (pb?free) 5000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTMFS5C404N www. onsemi.com 6 package dimensions m 3.00 3.40 0 ??? 3.80 12 dfn5 5x6, 1.27p (so?8fl) case 488aa issue m notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 d1 4.70 4.90 d2 3.80 4.00 e 6.15 e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.575 k 1.20 1.35 l 0.51 0.575 l1 0.125 ref a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 style 1: pin 1. source 2. source 3. source 4. gate 5. drain m *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 4x 4x pin 5 (exposed pad) 5.00 5.30 6.00 6.30 pitch dimensions: millimeters 1 recommended e on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTMFS5C404N/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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